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Indium arsenide InAs

InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown with InAs single crystal as the substrate, and infrared light-emitting devices with a wavelength of 2-14 μm can be produced. AlGaSb superlattice structure materials can also be epitaxially grown with InAs single crystal substrate, and the production Mid-infrared quantum cascade lasers. These infrared devices have good application prospects in the fields of gas monitoring and low-loss optical fiber communication .

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Product Description

In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices. As a single crystal substrate, InAs material needs to have low dislocation density, good lattice integrity, suitable electrical parameters and high uniformity .

The main growth method of InAs single crystal material is the traditional liquid seal Czochralski technology (LEC).

Product parameters

single crystal	doping	conductivity type	Carrier concentrationcm -3	Mobility(cm 2 /Vs)	Dislocation density (cm -2 )	standard substrate
InAs	Intrinsic	N	5 x 10 16	³ 2 x 10 4	<5 x 10 4	Φ2″×0.5mmΦ3″×0.5mm
InAs	sn	N	(5-20) x 10 17	>2000	<5 x 10 4	Φ2″×0.5mmΦ3″×0.5mm
InAs	Zn	P	(1-20) x 10 17	100-300	<5 x 10 4	Φ2″×0.5mmΦ3″×0.5mm
InAs	S	N	(1-10) x 10 17	>2000	<5 x 10 4	Φ2″×0.5mmΦ3″×0.5mm
Dimensions (mm)			Dia50.8x0.5mm, 10×10×0.5mm, 10×5×0.5mm can be customized for special substrates
Surface roughness			Ra:＜ 1nm
polishing			single or double sided
Package			Class 100 clean bag, Class 1000 ultra-clean room